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HiPerFASTTM IGBT with Diode
Light Speed Series
IXGH 32N60CD1 IXGT 32N60CD1
VCES IC25
VCE(SAT)typ tfi(typ)
= 600 = 60 = 2.1 = 55
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 600 600 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 5 V V V V A A A A
TO-247 AD (IXGH)
G
C E
C (TAB)
TO-268 (D3) ( IXGT)
G
W C C C C Nm/lb.in. g g Features G = Gate E = Emitter
E
C (TAB)
C = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 AD TO-268
* International standard TO-247AD package * High current handling capability * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 3 100 2.1 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250mA, VGE = 0 V = 250 mA, VCE = VGE
* Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers Advantages * High power density * Very fast switching speeds for high frequency applications * High power surface mountable package
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
97544D (7/00)
(c) 2000 IXYS All rights reserved
1-5
IXGH 32N60CD1 IXGT 32N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 150C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 22 40 25 20 85 55 0.32 25 25 1 110 100 0.85 170 160 1.25 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
0.25
0.62 K/W K/W
1.5 2.49
TO-268AA (D3 PAK)
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V, Pulse test t 300 ms, duty cycle d 2 %
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ =150C TJ = 25C 6 100 25 1.6 2.5 V V A ns ns 0.9 K/W
Dim. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V TJ = 100C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C
Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXGH 32N60CD1 IXGT 32N60CD1
100
TJ = 25C
200
VGE = 15V 13V 11V
9V TJ = 25C
VGE = 15V
80
160
13V
11V
IC - Amperes
IC - Amperes
60 40 20
5V
120
9V
80 40 0
7V 5V
7V
0 0 1 2 3 4 5
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
TJ = 125C VGE = 15V 11V 9V
1.50
13V VGE = 15V IC = 64A
VCE (sat) - Normalized
80
1.25
IC = 32A
IC - Amperes
60 40 20
5V 7V
1.00
IC = 16A
0.75
0 0 1 2 3 4 5
0.50
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
10000
Ciss f = 1Mhz
80 Capacitance - pF
IC - Amperes
1000
Coss
60 40
TJ = 125C
100
Crss
20
TJ = 25C
0 3 4 5 6 7 8 9 10
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
(c) 2000 IXYS All rights reserved
3-5
IXGH 32N60CD1 IXGT 32N60CD1
1.00
TJ = 125C
4
E(OFF) RG = 10
4
TJ = 125C
8
E(ON) - millijoules
E(ON) - millijoules
0.75
E(ON)
3
3
E(ON)
IC = 64A E(OFF)
E(OFF) - milliJoules
6
E(OFF) - millijoules
0.50
2
2
E(ON) E(OFF)
4
0.25
1
1
E(ON)
IC = 32A IC = 16A
2
E(OFF)
0.00
0
0 20 40 60 80
0
0
0
10
20
30
40
50
60
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
16
IC = 32A VCE = 300V
Fig. 8. Dependence of EON and EOFF on RG.
100
64
12
IC - Amperes
VGE - Volts
10
TJ = 125C
RG = 4.7 dV/dt < 5V/ns
8
1
4
0 0 25 50 75 100 125
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
D=0.5 D=0.2
Fig. 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-5
IXGH 32N60CD1 IXGT 32N60CD1
60 A 50 IF 40 1000
TVJ= 100C nC VR = 300V IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
800 Qr
TVJ=150C
30
600
TVJ=100C
20
400 10
TVJ=25C
10 0 0 1 2 VF 3V
200
5 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
0 100
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 14 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.00 s
2.0
TVJ= 100C VR = 300V
TVJ= 100C IF = 30A V FR tfr
1.5 Kf 1.0
trr 80
tfr 0.75
I RM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 0 40 80 120 C 160 TVJ
60 0 200 400 600 -diF/dt 800 A/ms 1000
0 0 200 400
0.00 600 A/ms 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 ZthJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1 t
s
1
Fig. 18 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
5-5

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